Device measuring a physical state of a material by spectrum and a method thereof

ABSTRACT

The present invention is a device and a method thereof measuring a physical state of a material by spectrum, the device comprising: a first action path where a material to be measured is contained; a detecting unit detecting a spectrum; and a processing unit obtaining a deposition state relating to the material to be measured based on the spectrum. An advance monitoring can be supplied when a deposit is formed by the present invention, therefore, the deposition process can be observed and/or controlled immediately, and the yield and degree of automation will be greatly improved.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention is related to a field of monitoring a processrelating to plasma. Particularly the present invention is related to adevice and a method relating to the monitoring of performing depositionprocess with plasma by spectrum.

2. Description of Related Art

In an implementation of related plasma process in the prior art, such asa deposition process using plasma particularly, a deposition result of aworkpiece is usually checked after the process is completed. Therefore,an issue, for example but not limited to pool-deposition,over-deposition, impurities, etc., happened in the process cannot bediscovered, and even a yield risk is produced due to the undiscoveredflow into back end of line (BEOL).

In view of this, the applicant has developed a design of a device andmethod measuring a physical state of a material by spectrum withcontinuous research and experiment, therefore the yield and degree ofautomation are greatly improved through observing and/or control thedeposition process on time, and accordingly the yield and degree ofautomation will be greatly improved.

SUMMARY OF THE INVENTION

A main purpose of the present invention is providing a device and amethod measuring a physical state of a material by spectrum. The presentinvention can detect a spectrum of a material in a first action path, asecond action path and/or a tube by a detecting unit, and the depositionstate of at least related material to be measured can be obtained by aprocessing unit based on the spectrum. The present invention can furthercontrol an action condition by the processing unit based on a spectrumvariation of the related material to be measured.

Therefore, the present invention can control and/or monitor depositionprocess on time by the above said device and method measuring a physicalstate of a material by spectrum. Accordingly an advance monitoring canbe supplied when a deposit is formed, such as an issue due to theundiscovered flow into back end of line (BEOL), for example but notlimited to pool-deposition, over-deposition, impurities, etc., will beprevented from a yield risk.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 showing an aspect block diagram of a device measuring a physicalstate of a material by spectrum of the present invention;

FIG. 2 showing another aspect block diagram of a device measuring aphysical state of a material by spectrum of the present invention;

FIG. 3 showing still another aspect block diagram of a device measuringa physical state of a material by spectrum of the present invention;

FIG. 4A and FIG. 4B showing the aspect block diagram of a devicecomprising the other elements and measuring a physical state of amaterial by spectrum of the present invention;

FIG. 5 showing another aspect block diagram of a device comprising theother elements and measuring a physical state of a material by spectrumof the present invention;

FIG. 6 showing still another aspect block diagram of a device comprisingthe other elements and measuring a physical state of a material byspectrum of the present invention;

FIG. 7 showing a block diagram of a method measuring a physical state ofa material by spectrum of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Please refer to FIG. 1, a block diagram of the device 1 for measuring aphysical state of a material by spectrum of the present invention. Itincludes a first action path 10 for containing a material to bemeasured, a detecting unit 11 for detecting spectrum and a processingunit 12 to obtain the deposition state of the related material to bemeasured based on the spectrum. In an example, at least parts of thematerial to be measured may be in the plasma state, and the spectrum maybe the spectrum of the light emitted by the material to be measured inthe plasma state. And the spectrum in the first action path 10 can bedetected by the detecting unit 11.

Following the processing unit 12 obtaining the spectrum, the processingunit 12 may obtain the information, for example but not limited to theintensity, the wavelength, the full width at half maximum (FWHM), etc.in order to obtain the deposition state relating to the material to bemeasured through the spectrum of another or the other material. Forexample but not limited to, when the spectrum intensity of the materialto be measured is higher or lower than the threshold, the depositionstate of the material to be measured achieving to certain level may beobtained through a relationship of chemical equation and/or arelationship of supplied mole quantity, etc. between another or theother material and the material to be measured, for example but notlimited to a thickness, the crystallinity, the degree of coalescenceand/or aggregation, etc.

In another example, the first action path 10 may be communicated with asecond action path. The material and/or another or the other material tobe measured may be contained in the second action path.

Please refer to FIG. 2, showing another aspect block diagram of thedevice 1 measuring a physical state of a material to be measured byspectrum of the present invention. The first action path 10 may becommunicated with a second action path 20. At least parts of thematerial to be measured may come from the second action path 20, and thespectrum in the second action path 20 can be detected by the detectingunit 11. In an example, at least parts of the material to be measuredmay be in the plasma state, and the spectrum can be the spectrum of thelight emitted by the material to be measured in the plasma state. Thespectrum in the second action path 20 can be detected by the detectingunit 11. Following the processing unit 12 obtaining the spectrum, theprocessing unit 12 may obtain the information, for example but notlimited to the intensity, the wavelength, the full width at half maximum(FWHM), etc. in order to obtain the deposition state relating to thematerial to be measured. For example, but not limited to, when thespectrum intensity of the material to be measured is higher or lowerthan the threshold, the deposition state of the material to be measuredin the first action path 10 and/or the second action path 20 achieved tocertain level may be obtained, for example but not limited to athickness, the crystallinity, the degree of coalescence and/oraggregation, etc.

In another example, another or the other material may be in the plasmastate, and the spectrum can be the spectrum of the light emitted by thematerial in the plasma state. And the spectrum in the second action path20 can be detected by the detecting unit 11. Following the processingunit 12 obtaining the spectrum, the processing unit 12 may obtain theinformation, for example but not limited to the intensity, thewavelength, the full width at half maximum (FWHM), etc. in order toobtain the deposition state relating to the material to be measuredthrough the spectrum of another or the other material.

For example but not limited to, when the spectrum intensity of anotheror the other material is higher or lower than the threshold, thedeposition state of the material to be measured achieving to certainlevel may be obtained through a relationship of chemical reactionformula and/or a relationship of supplied mole quantity, etc. betweenanother or the other material and the material to be measured, forexample but not limited to the thickness, the crystallinity, the degreeof coalescence and/or aggregation, etc.

Please refer to FIG. 3, showing still another aspect block diagram of adevice measuring a physical state of a material by spectrum 1 of thepresent invention. The first action path 10 may be communicated with asecond action path 20 via a tube 30, at least part of the material to bemeasured comes from the second action path 20 via the tube 30, and thespectrum in the tube 30 is detected by the detecting unit 11. In anexample, at least part of the material to be measured may be in theplasma state, and the spectrum may be the spectrum of the light emittedby the material in the plasma state. The spectrum in the tube 30 isdetected by the detecting unit 11. After the processing unit 12obtaining the spectrum, the processing unit 12 may obtain theinformation, for example but not limited to the intensity, thewavelength, the full width at half maximum (FWHM), etc. in order toobtain the deposition state relating to the material to be measured. Forexample, but not limited to, when the spectrum intensity of the materialto be measured is higher or lower than the threshold, the depositionstate of the material to be measured in at least one of the tube 30, thefirst action path 10 and the second action path 20 achieved to certainlevel may be obtained, for example but not limited to the thickness, thecrystallinity, the degree of coalescence and/or aggregation, etc.

In another example, another or the other material may be in the plasmastate, and the spectrum can be the spectrum of the light emitted by thematerial in the plasma state. The spectrum the tube 30 can be detectedby the detecting unit 11. Following the processing unit 12 obtaining thespectrum, the processing unit 12 may obtain the information, for examplebut not limited to the intensity, the wavelength, the full width at halfmaximum (FWHM), etc. in order to obtain the deposition state relating tothe material to be measured through the spectrum of another or the othermaterial. For example but not limited to, when the spectrum intensity ofanother or the other material is higher or lower than the threshold, thedeposition state of the material to be measured achieving to certainlevel may be obtained through a relationship of chemical reactionformula and/or a relationship of supplied mole quantity, etc. betweenanother or the other material and the material to be measured, forexample but not limited to the thickness, the crystallinity, the degreeof coalescence and/or aggregation, etc.

The action of the first action path 10 and the second action path 20 asmentioned above may be, for example but not limited to, a physicalaction and/or a chemical action relating to filling, reaction,compression, depression, heat-up and/or cooling down, etc. The firstaction path 10 may be for example but not limited to a chamber, achamber including multively independent and/or dependent reaction area,etc. communicated with each other.

It shall be noted that the material to be measured along with anotherand the other material as mentioned above may exist in the same actionpath without reacting, and the reaction will be performed untilachieving a workpiece.

The first action path 10 as mentioned above may be communicated with athrottling valve 13, a vacuum pump 14 and a gas purifier 15, etc.Following a reaction material is released or reduced in appropriateamount by the second action path 20 in accordance with the depositionstate relating to the material to be measured, a deposition operation ofthe material will be performed in the first action path 10 through thetube 30. A vacuum discharge will be then achieved by the vacuum pump 14and gas purifier 15, etc.

The detecting unit 11 as mentioned above may be arranged outside thefirst action path 10 and/or the second action path 20, to detect thespectrum of the material and/or another or the other material to bemeasured through such as a window.

The processing unit 12 as mentioned above may be connected to thedetecting unit 11 directly or indirectly. The processing unit 12 can bea chip, a processor, a mechanical computer, a circuit and/or amicroprocessor, etc., and the item “connected” may be a connectionmethod capable of transmitting a signal or an instruction, such as anelectrical connection, a quantum coupling (quantum entanglement) and/oran optical connection.

Particularly, the deposition state of the material and/or another or theother material to be measured may be further obtained by the processingunit 12 as mentioned above based on the spectrum variation of thematerial and/or another or the other material to be measured. Forexample, but not limited to, the deposition state of the material and/oranother or the other material to be measured may be furthermore obtainedby the processing unit 12 based on an intensity variation (such as aslope of the plot of intensity versus time, a slope of the plot of FWHMversus time, etc.) of the spectrum of the material and/or another or theother material to be measured.

More specifically, an action condition of the material and/or another orthe other material to be measured is further controlled by theprocessing unit 12 as mentioned above based on the variation of thespectrum of the material and/or another or the other material to bemeasured, for example but not limited to a switch of access, or thesupply of quantity, temperature, pressure, precursor, catalyst, etc.

Thereby, an early monitoring by the present invention will be suppliedinstantly when a deposit is formed, so as to avoid for example, but notlimited to insufficient deposition, excessive deposition, impurities andother problems of the yield risk which might flow into the back end ofline (BEOL) without detection. Furthermore, a deposition process may beobserved and/or controlled on time by the present invention, thereforethe yield and degree of automation can be greatly improved.

The present invention may be applied to all device and/or any apparatuswhich require measuring of gas deposition state, including but notlimited to physical vapor deposition device, chemical vapor depositiondevice, etching device and any other relevant device in thesemiconductor, photoelectric, panel industries and any other relevantindustry. The present invention may also be directly disposed in aremote plasma source device. In addition, the present invention may alsobe applied in any inspection examination device in the biotechnology,chemistry, applied physics industries and any other relevant industry.Furtherly, the present invention may also be applied to any inspectionapparatus or testing platform in the equipment maintenance industry forany of the foregoing industries.

Please refer to FIG. 4A, a device measuring a physical state of amaterial of the present invention furtherly comprises a display unit 16at least displaying a related data including the spectrum, a relateddata of the deposition state or the combination thereof. Wiredtransmission, wireless transmission, or a combination thereof may beperformed by at least one communication unit 17 between the processingunit 12 of a device 1 measuring a physical state of a material byspectrum and the detecting unit 11, the display unit 16 or at least thecombination thereof. The communication unit 17 may be contained in thedevice 1 measuring a physical state of a material by spectrum, or beindependent to the device 1 measuring a physical state of a material byspectrum as shown in FIG. 4B.

Each state of one of elements of the device 1 measuring a physical stateof a material by spectrum may also be displayed by the display unit 16.The types of the display unit 16 may include and not be limitedparticularly to liquid crystal displayer (LCD), electronic paper, lightsignal, micro light emitting diode displayer (micro LED), quantum dotdisplayer (QLED), organic light emitting displayer (OLED) or mechanicaldisplayer (such as flipped display board, etc.). Additionally, thebacklight source of the liquid crystal displayer (LCD) may be a lightemitting diode (LED) or a micro light emitting diode (micro LED).Besides the displayers as mentioned above, the display unit 16 may alsoinclude a notification module (not shown in Figures), such that anotification signal may be output through different signal types (suchas audio, light, etc.) by the display unit 16. In the aboveimplementation aspect, an information such as “the default state ofdissociation gas is 20 ppm”, “the actual state is 18 ppm”, “thetheoretical state is 20 mg”, “the adjustment parameter is 2 mg”, etc.can be displayed by the display unit 16.

For example but not limited to, when an internal volume of the firstaction path 10 is 1 ml and when there is default dissociated gas 20 ppmcontained in the first action path 10, the dissociated gas 20 mg (e.g.the theoretical state) is commanded to be injected into the first actionpath 10 by the processing unit 12, such that there will be thedissociated gas 20 ppm (e.g. the default state) contained in the firstaction path 10 for an usage of related process (such as reaction chambercleaning, thin film etching, plasma-assisted deposition etc.). Detectedby the detecting unit 11, an actual detection result of the dissociatedgas in the first action path 10 is 18 ppm (e.g. the actual state), andthis presents that an usage of the dissociated gas is continued to be inthe process. Following a detected result of the dissociated gas receivedby the processing unit 12 is 18 ppm, and comparing a difference between18 ppm and 20 ppm (e.g. calculating a difference between the actualstate and the default state of the dissociated gas), then the processingunit 12 may obtain a result that 2 ppm (e.g. adjustment parameter) ofthe dissociated gas shall be supplied to the first action path 10 suchthat the dissociated gas in the first action path 10 may achieve thetheoretical state of 20 ppm (to finish the reaction). Subsequently,following an user obtains a gas state data of the dissociated gasthrough such as a report and/or a light, he may input a command to theprocessing unit 12 manually, such that the dissociated gas can becontinued to be injected into the first action path 10 (e.g. thetheoretical state) by the processing unit 12, therefore the dissociatedgas in the first action path 10 will be 20 ppm (e.g. the default state).Following an injecting, until the dissociated gas in the first actionpath 10 is detected by the detecting unit 11 as 20 ppm (e.g. the actualstate), a theoretical state value to make the first action path 10contain 20 ppm of dissociated gas will be completed, which means theprocess reaction shall be completed, and that the gas will not berequired to inject into the first action path 10.

Additionally, a device measuring a physical state of a material byspectrum 1 further comprises a controlling unit 18 connected to theprocessing unit 12, in order to replace the processing unit 12 tocontrol a reaction condition (for example but not limited to a switch ofsupply, quantity, temperature, pressure, supply of precursor, supply ofcatalyst, etc. of the material and/or another or the other material tobe measured) of the material and/or another or the other material to bemeasured based on the spectrum variation of the material and/or anotheror the other material to be measured. The processing unit 12 may beconnected to the controlling unit 18 directly or indirectly. Thecontrolling unit 18 may be a chip, a processor, a mechanical computer, acircuit and/or a microprocessor, etc., and the connection may be aconnection method capable of transmit a signal or an instruction, suchas an electrical connection, a quantum coupling (quantum entanglement)and/or an optical connection, etc.

A setting instruction received by the controlling unit 18 may be amanual injecting instruction and/or an instruction output by theprocessing unit 12. The instructions comprise the control parameter(s).A cooperate method between the controlling unit 18 and the display unit16 may be: following the user views the display unit 16, identifying acontrol content to be adjusted; and inputting an injecting instructionmanually to the controlling unit 18, such that the controlling unit 18can tune a following related operating procedure. Or an automaticallymonitoring mechanism (Figures not shown) between the controlling unit 18and the processing unit 12 may be set, the automatically monitoringmechanism can mechanically identify the action condition to be adjusted,and an instruction will be output to the controlling unit 18, in orderto provide the following related procedure operated to the controllingunit 18.

As shown in FIG. 5, a device 1 measuring a physical state of a materialby spectrum further comprises a data transmitting unit 19 connected tothe processing unit 12, and the data transmitting unit 19 may beconnected to external network 3 through wired transmission, wirelesstransmission or a combination thereof, so that an artificialintelligence can be used for a big data calculation and the processingunit 12 and/or controlling unit 18 will be commanded to operate based onthe big data calculation. The external network 3 may be an internalnetwork of the manufacturing site, an internal network across themanufacturing sites, an internet or at least two thereof. The big datacalculation may be the artificial intelligence, a cloud computing, etc.with computing and/or storage capabilities. And big data calculationscan be performed by computers, laptops, mobile phones, portable mobiledevices, servers, supercomputers, mainframes, distributed computingarchitectures, etc. with computing and/or storage capabilities such asartificial intelligence and cloud computing, etc. The big datacalculation may perform a statistic based on an attribute (for example,material, previous or following process, design, etc.) of amanufacturing site, a machine, a raw material, and a workpiece, or thespectrum, the yield or at least two thereof, in order to provide a basisfor improvement. However, the present invention is not limited to these.It shall be noted that the display unit 16 and/or the communication unit17 described above can also be combined in this aspect with reference tothe above implementation aspect.

A device 1 measuring a physical state of a material by spectrum furthercomprises a memory unit 41 connected to the processing unit 12 and thedata transmitting unit 19. The memory unit 41 may be arranged betweenthe processing unit 12 and the data transmitting unit 19, or theprocessing unit 12 may be arranged between the memory unit 41 and thedata transmitting unit 19. Namely, the memory unit 41 can be containedin a device 1 measuring a physical state of a material by spectrum, orthe memory unit 41 may be independent to a device 1 measuring a physicalstate of a material by spectrum, and the memory unit 41 may be connectedto the data transmitting unit 19 by wired transmission, wirelesstransmission or a combination thereof, with at least storage conditions,the theoretical state, the actual state, the preset state, theadjustment parameter, the application software of the processing unit12, the processing unit 12 processes data, etc. or at least acombination of the two. The memory unit 41 may include at least onestorage medium from each of the following: Flash memory, hard disk,multimedia card micro memory, card type memory (for example, securedigital (SD) card or extreme digital (XD) card), random access memory(RAM), static random access memory (SRAM), read-only memory (ROM),electrically erasable programmable read-only memory (EEPROM),programmable read-only memory (PROM), magnetic memory, magnetic disk orCD, or the combination thereof. Additionally, a program stored in thememory unit 41 may include operating system programs and variousapplication programs.

Said memory unit 41 may be provided to the network 3 for usage andstorage data in order to analyze the data, specifically such as storingthe reaction condition, the theoretical state, the actual state, thedefault state and/or the adjustment parameter and reaction time, etc. ofthe material and/or another or the other material to be measured, butthe present invention is not limited to these.

A device 1 measuring a physical state of a material by spectrum mayfurtherly comprise a memory unit 41 and an artificial intelligence unit42, as shown in FIG. 6. The processing unit 12 can be connected to thememory unit 41 and the artificial intelligence unit 42; the memory unit41 stores the spectrum, the reaction condition, the theoretical state,the actual state, the default state, the adjustment parameter or atleast two thereof of the material and/or another or the other materialto be measured; The artificial intelligence unit 42 reads the spectrum,the reaction condition, the theoretical state, the actual state, thedefault state, the adjustment parameter or at least two thereof of thematerial and/or another or the other material to be measured, in orderto perform a big data algorithm by the artificial intelligence, andcommand the controlling unit 18 to operate based on the big dataalgorithm. The memory unit 41 and the artificial intelligence unit 42may be contained in a device 1 measuring a physical state of a materialby spectrum, but the spectrum, the reaction condition, the theoreticalstate, the actual state, the default state, the adjustment parameteretc., or at least two thereof of data of the material and/or another orthe other material to be measured may still be shared with the network3. It should be noted that the display unit 16, the communication unit17, and/or the data transmission unit 19 can also be combined in thisaspect with reference to the above implementation aspect.

Another implementation mode of the device 1 for measuring the physicalstate of a substance by spectrum can be the memory unit 41 connected tothe processing unit 12, the artificial intelligence unit 42 connected tothe memory unit 41, and an automated program unit connected to theartificial intelligence unit 42 and the control unit 18. Said artificialintelligence unit 42 may read the memory unit 41 and use the artificialintelligence to perform the big data algorithm, such that an operationof the automated program unit can perform. It shall be noted that, thedisplay unit 16, the communication unit 17 and/or the data transmittingunit 19 may also be combined with the present aspect with reference tothe aspect mentioned above. It still shall be noted that, each aspect ofthe detecting unit 11, the throttling valve 13, the vacuum pump 14, thegas purifier 15, the second action path 20 and the tube 30 may beapplied to every aspect of FIG. 4A to FIG. 6.

Said automated program unit may receive an instruction output by theartificial intelligence unit 42 to measure a physical state of amaterial of a device 1 with spectrum. When a device 1 measuring aphysical state of a material by spectrum is used for process, it may beintegrated with the other device and/or elements (such as a plasmacleaning device), e.g. the automated program unit may not only control adevice 1 measuring a physical state of a material by spectrum but alsocontrol the other integrated device to perform the automated program,such as cleaning procedures, maintenance procedures or inspectionprocedures, etc.

A method measuring a physical state of a material by spectrum comprisingstep S61 and step S62 is also provided by the present invention, asshown in FIG. 6. In step S61, detecting spectrum. Particularly, aspectrum may be detected by a detecting unit 11, and the spectrum may bedetected from a first action path, or the spectrum may be detected froma second action path communicated with the first action path, or thespectrum may be detected from a tube communicated with the first actionpath and the second action path. In step S62, a deposition staterelating to a material to be measured can be obtained based on thespectrum. Particularly, a deposition state of related material to bemeasured may be acquired by a processing unit 12 based on the spectrum.

A method measuring a physical state of a material by spectrum of thepresent invention further comprises controlling an action condition ofthe material and/or another or the other material to be measured basedon a variation of the spectrum relating to the material and/or anotheror the other material to be measured, following step S61, for examplebut not limited to, a switch of supply, quantity, temperature, pressure,supply of precursor, supply of catalyst, etc. of the material and/oranother or the other material to be measured. The other details of thismethod are as described above and will not be repeated.

It shall be noted that the “connecting” may be a connection methodcapable of transmit a signal or an instruction, such as an electricalconnection, a quantum coupling (quantum entanglement) and/or an opticalconnection etc., and the sequence of the connection may be directconnection or indirect connection. Additionally, a pre-calculated data(such as a parameter, a setting, an equation, a logic, etc.) of all saidcalculations, intermediate calculation data (such as a numerical value,a logical judgment, etc.) and a calculation result data may also bestored by the memory unit, and the memory unit may be simultaneouslytransmitting with the processing unit. However, the present invention isnot limited to these. The wired transmission, wireless transmission or acombination thereof means wired first and wireless later, wireless firstand wired later, or simultaneously wired and wireless, etc.

It furthermore shall be noted that the other detecting unit may be addedcorrespondingly in the situation adding the other action path and/ortube, such that the physical state of the material in the other actionpath and/or tube can be measured by the spectrum through said method. Orthe physical state of the material in the other action path and/or tubemay be measured by spectrum with a single or few detecting unit throughwindow such as movements or rotations. Additionally, the detecting unitmay be integrated with the processing unit into one element/module, andall units connected to the processing unit can be connected to theelement/module.

A device and method measuring a physical state of a material by spectrumof the present invention may be used for all process equipment requiredto detect the deposition state, especially equipment which uses plasma.Specifically and for example, a chamber required injecting the materialand performing deposition, modifying, etc. Additionally, an advancemonitoring can be supplied when a deposit is being formed by the presentinvention, such that an issue, for example but not limited toinsufficient deposition, over-deposition, impurities, etc., can beprevented from a yield risk of not be discovered before a defecttransported to back end of line (BEOL). Furthermore, a depositionprocess can be observed and/or controlled on time, therefore the yieldand degree of automation will be greatly improved.

Still furthermore, a device and method measuring a physical state of amaterial by spectrum may perform statistic based on large amount of databy the big data calculation, to provide a basis for improvement.

The present invention has been described in detail from the above.However, it can be only a preferred embodiment of the present invention,rather than the limitation of the implement scope of the presentinvention. That is to say, all equal changes and modifications made inaccordance with the scope of the patent application of the presentinvention shall still fall within the scope of the patent of the presentinvention.

What is claimed is:
 1. A device measuring a physical state of a materialby spectrum, comprising: a first action path where a material to bemeasured is contained in; a detecting unit detecting a spectrum; and aprocessing unit obtaining a deposition state relating to the material tobe measured based on the spectrum.
 2. A device measuring a physicalstate of a material by spectrum as mentioned in claim 1, wherein thespectrum in the first action path is detected by the detecting unit. 3.A device measuring a physical state of a material by spectrum of claim1, wherein the first action path is communicated with a second actionpath, at least part of the material to be measured comes from the secondaction path, and the spectrum in the second action path is detected bythe detecting unit.
 4. A device measuring a physical state of a materialby spectrum as mentioned in claim 1, wherein the first action path iscommunicated with a second action path via a tube, at least parts of thematerial to be measured come from the second action path via the tube,and the spectrum in the tube can be detected by the detecting unit.
 5. Adevice measuring a physical state of a material by spectrum as mentionedin claim 1, wherein at least parts of the material to be measured are ina plasma state.
 6. A method measuring a physical state of a material byspectrum, comprising: detecting a spectrum; and obtaining a depositionstate relating to a material to be measured based on the spectrum.
 7. Amethod measuring a physical state of a material by spectrum as mentionedin claim 6, wherein the spectrum is detected from a first action path.8. A method measuring a physical state of a material by spectrum asmentioned in claim 6, wherein the spectrum is detected from a secondaction path communicated with a first action path.
 9. A method measuringa physical state of a material by spectrum as mentioned in claim 6,wherein the spectrum is detected from a tube communicated with a firstaction path and a second action path.
 10. A method measuring a physicalstate of a material by spectrum as mentioned in claim 6, furthercomprising controlling an action condition based on a variation of thespectrum relating to the material to be measured after detecting thespectrum.
 11. A method measuring a physical state of a material byspectrum as mentioned in claim 6, wherein at least parts of the materialto be measured are in a plasma state.